Articles | Volume 12
Adv. Radio Sci., 12, 95–101, 2014
https://doi.org/10.5194/ars-12-95-2014
Adv. Radio Sci., 12, 95–101, 2014
https://doi.org/10.5194/ars-12-95-2014

  10 Nov 2014

10 Nov 2014

An enhanced BSIM modeling framework for selfheating aware circuit design

M. Schleyer1, S. Leuschner2, P. Baumgartner2, J.-E. Mueller2, and H. Klar1 M. Schleyer et al.
  • 1Fachgebiet Mikroelektronik, Technische Universität Berlin, Germany
  • 2Intel Mobile Communications GmbH, Munich, Germany

Abstract. This work proposes a modeling framework to enhance the industry-standard BSIM4 MOSFET models with capabilities for coupled electro-thermal simulations. An automated simulation environment extracts thermal information from model data as provided by the semiconductor foundry. The standard BSIM4 model is enhanced with a Verilog-A based wrapper module, adding thermal nodes which can be connected to a thermal-equivalent RC network. The proposed framework allows a fully automated extraction process based on the netlist of the top-level design and the model library. A numerical analysis tool is used to control the extraction flow and to obtain all required parameters. The framework is used to model self-heating effects on a fully integrated class A/AB power amplifier (PA) designed in a standard 65 nm CMOS process. The PA is driven with +30 dBm output power, leading to an average temperature rise of approximately 40 °C over ambient temperature.