Design of a LNA in the frequency band 1.8-2.2GHz in 0.13μm CMOS Technology

Di Gioia, E.; Hermann, C.; Klar, H.

doi:https://doi.org/10.5194/ars-3-299-2005

Articles | Volume 3

https://doi.org/10.5194/ars-3-299-2005

© Author(s) 2005. This work is licensed under
the Creative Commons Attribution-NonCommercial-ShareAlike 2.5 License.

https://doi.org/10.5194/ars-3-299-2005

© Author(s) 2005. This work is licensed under
the Creative Commons Attribution-NonCommercial-ShareAlike 2.5 License.

Articles | Volume 3

13 May 2005

| 13 May 2005

Design of a LNA in the frequency band 1.8-2.2GHz in 0.13μm CMOS Technology

E. Di Gioia, C. Hermann, and H. Klar

Abstract. The subject of this work is a low noise amplifier (LNA), operating in the frequency range 1.8-2.1GHz. The CMOS 0.13μm technology is used in respect to the low cost of the final device. Among the specifications, a variable gain and an adjustable working frequency are required. In particular, four different working modes are provided: 1.8, 1.9 and 2.1GHz high gain and 2.1GHz low gain. The amplifier is designed to be used as first stage of a receiver for mobile telephony. For this reason low power consumption is taken into consideration (low supply voltage and low drain currents). A simple digital circuit, integrated on-chip, is used to select the operating mode of the LNA by means of two input pins. A Noise figure of 1dB is obtained with a supply voltage of 0.8V.