Articles | Volume 7
https://doi.org/10.5194/ars-7-185-2009
https://doi.org/10.5194/ars-7-185-2009
19 May 2009
 | 19 May 2009

Modellierung von Quanteneffekten in einem ladungsbasierten MOS-Transistor-Modell zur Simulation von nanoskalierten CMOS-Analogschaltungen

S. Stegemann, J. Xiong, and W. Mathis

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