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Advances in Radio Science An open-access journal of the U.R.S.I. Landesausschuss in der Bundesrepublik Deutschland e.V.
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Volume 7
Adv. Radio Sci., 7, 225–229, 2009
https://doi.org/10.5194/ars-7-225-2009
© Author(s) 2009. This work is distributed under
the Creative Commons Attribution 3.0 License.
Adv. Radio Sci., 7, 225–229, 2009
https://doi.org/10.5194/ars-7-225-2009
© Author(s) 2009. This work is distributed under
the Creative Commons Attribution 3.0 License.

  19 May 2009

19 May 2009

Influence of gate tunneling currents on switched capacitor integrators

W. Kraus and D. Schmitt-Landsiedel W. Kraus and D. Schmitt-Landsiedel
  • Institute for Technical Electronics, Technische Universität München, Germany

Abstract. In order to achieve a higher level of integration in modern VLSI systems, not only the lateral geometrical dimensions have to be scaled. Lowering the supply voltage also requires scaling down the oxide thickness of the transistors. While the oxide thickness is scaled down proportionally with the supply voltage, the gate tunneling currents grow exponentially, which results in special issues concerning deviations in charge based analog and mixed signal circuitry. The influence of gate tunneling currents on this kind of circuits will be demonstrated at a fully differential switched capacitor integrator. The used process data is derived from the International Technology Roadmap for Semiconductors (ITRS Roadmap, 2006). The Parameter sets for the simulations are based on the Predictive Technology Model of the Arizona State University Modelling Group for the 65 nm Technology node (Predictive Technology Model, 2008).

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