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Advances in Radio Science An open-access journal of the U.R.S.I. Landesausschuss in der Bundesrepublik Deutschland e.V.
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Volume 7
Adv. Radio Sci., 7, 231–236, 2009
https://doi.org/10.5194/ars-7-231-2009
© Author(s) 2009. This work is distributed under
the Creative Commons Attribution 3.0 License.
Adv. Radio Sci., 7, 231–236, 2009
https://doi.org/10.5194/ars-7-231-2009
© Author(s) 2009. This work is distributed under
the Creative Commons Attribution 3.0 License.

  19 May 2009

19 May 2009

Circuit design with Independent Double Gate Transistors

M. Weis, R. Emling, and D. Schmitt-Landsiedel M. Weis et al.
  • Technische Universität München, Lehrstuhl für Technische Elektronik, Germany

Abstract. Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.

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