Articles | Volume 8
Adv. Radio Sci., 8, 275–278, 2010
https://doi.org/10.5194/ars-8-275-2010
Adv. Radio Sci., 8, 275–278, 2010
https://doi.org/10.5194/ars-8-275-2010

  17 Nov 2010

17 Nov 2010

Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

M. Weis and D. Schmitt-Landsiedel M. Weis and D. Schmitt-Landsiedel
  • Technische Universität München, Lehrstuhl für Technische Elektronik, Germany

Abstract. The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.