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Volume 8
ARS, 8, 275–278, 2010
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https://doi.org/10.5194/ars-8-275-2010
© Author(s) 2010. This work is distributed under
the Creative Commons Attribution 3.0 License.
https://doi.org/10.5194/ars-8-275-2010
© Author(s) 2010. This work is distributed under
the Creative Commons Attribution 3.0 License.
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17 Nov 2010
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17 Nov 2010
Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
M. Weis
and
D. Schmitt-Landsiedel
M. Weis
×
Technische Universität München, Lehrstuhl für Technische Elektronik, Germany
D. Schmitt-Landsiedel
×
Technische Universität München, Lehrstuhl für Technische Elektronik, Germany
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