|
17 Nov 2010
Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
M. Weis and D. Schmitt-Landsiedel
Viewed
Total article views: 2,240 (including HTML, PDF, and XML)
HTML |
PDF |
XML |
Total |
BibTeX |
EndNote |
604 |
1,313 |
323 |
2,240 |
82 |
76 |
- HTML: 604
- PDF: 1,313
- XML: 323
- Total: 2,240
- BibTeX: 82
- EndNote: 76
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads
(calculated since 01 Feb 2013)
Latest update: 27 Mar 2024