Articles | Volume 8
https://doi.org/10.5194/ars-8-275-2010
https://doi.org/10.5194/ars-8-275-2010
17 Nov 2010
 | 17 Nov 2010

Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

M. Weis and D. Schmitt-Landsiedel

Viewed

Total article views: 2,623 (including HTML, PDF, and XML)
HTML PDF XML Total BibTeX EndNote
821 1,444 358 2,623 143 198
  • HTML: 821
  • PDF: 1,444
  • XML: 358
  • Total: 2,623
  • BibTeX: 143
  • EndNote: 198
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads (calculated since 01 Feb 2013)
Latest update: 17 May 2026
Download
Share