
|
17 Nov 2010
Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
M. Weis and D. Schmitt-Landsiedel
Viewed
Total article views: 2,679 (including HTML, PDF, and XML)
| HTML |
PDF |
XML |
Total |
BibTeX |
EndNote |
| 845 |
1,470 |
364 |
2,679 |
151 |
207 |
- HTML: 845
- PDF: 1,470
- XML: 364
- Total: 2,679
- BibTeX: 151
- EndNote: 207
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads
(calculated since 01 Feb 2013)
Latest update: 13 Sep 2026