|
17 Nov 2010
Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
M. Weis and D. Schmitt-Landsiedel
Viewed
Total article views: 2,570 (including HTML, PDF, and XML)
| HTML |
PDF |
XML |
Total |
BibTeX |
EndNote |
| 792 |
1,425 |
353 |
2,570 |
136 |
187 |
- HTML: 792
- PDF: 1,425
- XML: 353
- Total: 2,570
- BibTeX: 136
- EndNote: 187
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads
(calculated since 01 Feb 2013)
Latest update: 11 Feb 2026
