
|
17 Nov 2010
Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
M. Weis and D. Schmitt-Landsiedel
Viewed
Total article views: 2,632 (including HTML, PDF, and XML)
| HTML |
PDF |
XML |
Total |
BibTeX |
EndNote |
| 824 |
1,448 |
360 |
2,632 |
144 |
200 |
- HTML: 824
- PDF: 1,448
- XML: 360
- Total: 2,632
- BibTeX: 144
- EndNote: 200
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads
(calculated since 01 Feb 2013)
Latest update: 12 Jun 2026