Articles | Volume 8
https://doi.org/10.5194/ars-8-275-2010
https://doi.org/10.5194/ars-8-275-2010
17 Nov 2010
 | 17 Nov 2010

Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

M. Weis and D. Schmitt-Landsiedel

Viewed

Total article views: 2,372 (including HTML, PDF, and XML)
HTML PDF XML Total BibTeX EndNote
676 1,353 343 2,372 107 99
  • HTML: 676
  • PDF: 1,353
  • XML: 343
  • Total: 2,372
  • BibTeX: 107
  • EndNote: 99
Views and downloads (calculated since 01 Feb 2013)
Cumulative views and downloads (calculated since 01 Feb 2013)
Latest update: 20 Jun 2025
Download
Share