Articles | Volume 15
21 Sep 2017
 | 21 Sep 2017

Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product

Sehoon Park, Xuan-Quang Du, Markus Grözing, and Manfred Berroth

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Cited articles

Ahmed, F., Furgan, M., Aufinger, K., and Stelzer, A.: Compact broadband amplifiers with up to 105 GHz bandwidth in SiGe BiCMOS, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 3–6,, 2015.
Cherry, E. M. and Hooper, D. E.: The design of wide-band transistor feedback amplifiers, P. I. Electr. Eng., 110, 375–389,, 1963.
Ding, R., Xuan, Z., Yao, P., Baehr-Jones, T., Prather, D., and Hochberg, M.: Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS, Electron. Lett., 50, 741–743,, 2014.
Gharib, A., Fischer, G., Weigel, R., and Kissinger, D.: A broadband 1.35 THz GBP 120-mW common-collector feedback amplifier in SiGe technology, IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1–4,, 2012.
Gharib, A., Weigel, R., and Kissinger, D.: Broadband Circuit Techniques for Multi-Terahertz Gain-Bandwidth-Product Low-Power Applications, IEEE T. Microw. Theory, 63, 3701–3712,, 2015.
Short summary
This paper presents a new generalized design methodology based on simplified gain estimations for multi-stage Cherry–Hooper amplifiers. With the proposed approach, a limiting amplifier with 14.6 THz gain-bandwidth-product and 0.5 ps maximum group delay variation is designed.