Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product
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Ahmed, F., Furgan, M., Aufinger, K., and Stelzer, A.: Compact broadband amplifiers with up to 105 GHz bandwidth in SiGe BiCMOS, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 3–6, https://doi.org/10.1109/RFIC.2015.7337690, 2015.
Cherry, E. M. and Hooper, D. E.: The design of wide-band transistor feedback amplifiers, P. I. Electr. Eng., 110, 375–389, https://doi.org/10.1049/piee.1963.0050, 1963.
Ding, R., Xuan, Z., Yao, P., Baehr-Jones, T., Prather, D., and Hochberg, M.: Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS, Electron. Lett., 50, 741–743, https://doi.org/10.1049/el.2014.0367, 2014.
Gharib, A., Fischer, G., Weigel, R., and Kissinger, D.: A broadband 1.35 THz GBP 120-mW common-collector feedback amplifier in SiGe technology, IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1–4, https://doi.org/10.1109/BCTM.2012.6352612, 2012.
Gharib, A., Weigel, R., and Kissinger, D.: Broadband Circuit Techniques for Multi-Terahertz Gain-Bandwidth-Product Low-Power Applications, IEEE T. Microw. Theory, 63, 3701–3712, https://doi.org/10.1109/TMTT.2015.2481398, 2015.