Articles | Volume 15
https://doi.org/10.5194/ars-15-49-2017
https://doi.org/10.5194/ars-15-49-2017
21 Sep 2017
 | 21 Sep 2017

Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

Martin Schleyer, Dominic Maurath, Heinrich Klar, and Friedel Gerfers

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Short summary
This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. The approach is demonstrated on a 65-nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals.