Articles | Volume 15
https://doi.org/10.5194/ars-15-49-2017
https://doi.org/10.5194/ars-15-49-2017
21 Sep 2017
 | 21 Sep 2017

Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

Martin Schleyer, Dominic Maurath, Heinrich Klar, and Friedel Gerfers

Related authors

An enhanced BSIM modeling framework for selfheating aware circuit design
M. Schleyer, S. Leuschner, P. Baumgartner, J.-E. Mueller, and H. Klar
Adv. Radio Sci., 12, 95–101, https://doi.org/10.5194/ars-12-95-2014,https://doi.org/10.5194/ars-12-95-2014, 2014

Cited articles

Bösch, W. and Gatti, G.: Measurement and simulation of memory effects in pre-distortion linearizers,IEEE Transactions on Microwave Theory and Techniques, 37.12, 1885–1890, https://doi.org/10.1109/22.44098, 1989.
Brunk, M. and Jüngel, A.: Self-heating in a coupled thermo-electric circuit-device model, J. Comput. Electron., 10, 163–178 https://doi.org/10.1007/s10825-010-0324-9, 2011.
Leuschner, S., Pinarello, S., Hodel, U., Mueller, J. E., and Klar, H.: A 31-dBm, high ruggedness power amplifier in 65-nm standard CMOS with high-efficiency stacked-cascode stages, in: Radio Frequency Integrated Circuits Symposium (RFIC), IEEE, 395–398, https://doi.org/10.1109/RFIC.2010.5477401, 2010.
Leuschner, S., Mueller, J.-E., and Klar, H.: A 1.8GHz wideband stacked-cascode CMOS power amplifier for WCDMA applications in 65 nm standard CMOS, in: Radio Frequency Integrated Circuits Symposium (RFIC), IEEE, 1–4, 2011.
Martens, J. and Noujeim, K.: IMD phase analysis at mm-wave frequencies, in: Microwave Symposium Digest (MTT), IEEE MTT-S International, https://doi.org/10.1109/MWSYM.2012.6259703, 2012.
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Short summary
This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. The approach is demonstrated on a 65-nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals.