Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator

Fatemi, A.; Gaul, H.; Keil, U.; Klar, H.

doi:https://doi.org/10.5194/ars-13-121-2015

Articles | Volume 13

https://doi.org/10.5194/ars-13-121-2015

© Author(s) 2015. This work is distributed under
the Creative Commons Attribution 3.0 License.

https://doi.org/10.5194/ars-13-121-2015

© Author(s) 2015. This work is distributed under
the Creative Commons Attribution 3.0 License.

Articles | Volume 13

03 Nov 2015

| 03 Nov 2015

Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator

A. Fatemi, H. Gaul, U. Keil, and H. Klar

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Short summary

This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified cascode topology and capacitance degeneration technique is employed to meet current application requirements; high voltage swing at high datarate.