Articles | Volume 13
https://doi.org/10.5194/ars-13-121-2015
https://doi.org/10.5194/ars-13-121-2015
03 Nov 2015
 | 03 Nov 2015

Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator

A. Fatemi, H. Gaul, U. Keil, and H. Klar

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Cited articles

Giesecke, A. L., Prinzen, A., Bolten, J., Porschatis, C., Chmielak, B., Matheisen, C., Wahlbrink, T., Lerch, H., Waldow, M., and Kurz, H.: Add-drop microring resonator for electro-optical switching and optical power monitoring, in: Proceedings of the 34th Conference on Lasers and Electro-Optics, 08–13 June 2014, San Jose, USA, 1–2, 2014.
InfiniBand Architecture, Volume 2: https://cw.infinibandta.org/document/dl/7141, last access: November 2012.
Li, D. U. and Tsai, C. M.: 10-Gbps modulator drivers with local feedback networks, IEEE J. Solid-St. Circ., 1, 1025–1030, 2006.
Li, D. U., Haung, L. R., and Tsai, C. M.: Low power consumption 10-Gbps SiGe modulator drivers with 9VPP differential output swing using intrinsic collector base capacitance feedback network, IEEE Rad. Freq. Integr., 1, 317–320, 2005a.
Li, D. U., Haung, L. R., and Tsai, C. M.: 10 Gbps CMOS laser driver with 3.3 V output swing, IEEE Cust. Integr. Cir., 1, 333–336, 2005b.
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Short summary
This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified cascode topology and capacitance degeneration technique is employed to meet current application requirements; high voltage swing at high datarate.