Articles | Volume 15
https://doi.org/10.5194/ars-15-269-2017
https://doi.org/10.5194/ars-15-269-2017
05 Dec 2017
 | 05 Dec 2017

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

María Félix Rosa, Lotte Rathgeber, Raik Elster, Niklas Hoppe, Thomas Föhn, Martin Schmidt, Wolfgang Vogel, and Manfred Berroth

Viewed

Total article views: 2,153 (including HTML, PDF, and XML)
HTML PDF XML Total BibTeX EndNote
962 1,065 126 2,153 100 105
  • HTML: 962
  • PDF: 1,065
  • XML: 126
  • Total: 2,153
  • BibTeX: 100
  • EndNote: 105
Views and downloads (calculated since 05 Dec 2017)
Cumulative views and downloads (calculated since 05 Dec 2017)

Viewed (geographical distribution)

Total article views: 1,998 (including HTML, PDF, and XML) Thereof 1,988 with geography defined and 10 with unknown origin.
Country # Views %
  • 1
1
 
 
 
 

Cited

Latest update: 20 Nov 2024
Download
Short summary
We present the design of an optical modulator for amplitude modulation in a special silicon-on-insulator technology with 250 nm silicon layer thickness. The design of the modulator is optimized by simulating different parameters like dimension of the structure and doping of the silicon to improve the performance of the device. In addition, a prototype is fabricated and successfully measured to demonstrate the functionality of the technology.