05 Dec 2017
Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology
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Azadeh, S. S., Müller, J., Merget, F., Romero-García, S., Shen, B., and Witzens, J.: Advances in silicon photonics segmented electrode Mach-Zehnder modulators and peaking enhanced resonant devices, in: Photonics North 2014, edited by: MacLean, S. and Plant, D. V., Montréal, Canada, Wednesday 28 May 2014, SPIE Proceedings, SPIE, 928817, 2014.
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Azadeh, S. S., Romero-García, S., Merget, F., Moscoso-Mártir, A., den Driesch, N. von, Buca, D., and Witzens, J.: Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators, in: SPIE Optics + Optoelectronics, edited by: Cheben, P., Čtyroký, J., and Molina-Fernández, I., Prague, Czech Republic, Monday 13 April 2015, SPIE Proceedings, SPIE, 95160T, 2015b.
Brimont, A., Thomson, D. J., Gardes, F. Y., Fedeli, J. M., Reed, G. T., Marti, J., and Sanchis, P.: High-contrast 40 Gb/s operation of a 500 mum long silicon carrier-depletion slow wave modulator, Opt. Lett., 37, 3504–3506, https://doi.org/10.1364/OL.37.003504, 2012.
