Articles | Volume 15
05 Dec 2017
 | 05 Dec 2017

Design of a carrier-depletion Mach-Zehnder modulator in 250 nm silicon-on-insulator technology

María Félix Rosa, Lotte Rathgeber, Raik Elster, Niklas Hoppe, Thomas Föhn, Martin Schmidt, Wolfgang Vogel, and Manfred Berroth

Related authors

Single waveguide silicon-organic hybrid modulator
Niklas Hoppe, Christian Rothe, Arda Celik, María Félix Rosa, Wolfgang Vogel, Daniel Widmann, Lotte Rathgeber, M. Carmen Ruiz Delgado, Belén Villacampa, Sabine Ludwigs, and Manfred Berroth
Adv. Radio Sci., 15, 141–147,,, 2017
Short summary

Cited articles

Akiyama, S., Baba, T., Imai, M., Akagawa, T., Noguchi, M., Saito, E., Noguchi, Y., Hirayama, N., Horikawa, T., and Usuki, T.: 50-Gb/s silicon modulator using 250-µm-Long phase shifter based-on forward-biased pin diodes, in: 2012 IEEE 9th International Conference on Group IV Photonics (GFP), San Diego, CA, USA, 192–194, 2012.
Azadeh, S. S., Müller, J., Merget, F., Romero-García, S., Shen, B., and Witzens, J.: Advances in silicon photonics segmented electrode Mach-Zehnder modulators and peaking enhanced resonant devices, in: Photonics North 2014, edited by: MacLean, S. and Plant, D. V., Montréal, Canada, Wednesday 28 May 2014, SPIE Proceedings, SPIE, 928817, 2014.
Azadeh, S. S., Merget, F., Romero-Garcia, S., Moscoso-Martir, A., den Driesch, N. von, Muller, J., Mantl, S., Buca, D., and Witzens, J.: Low V(pi) Silicon photonics modulators with highly linear epitaxially grown phase shifters, Opt. Express, 23, 23526–23550,, 2015a.
Azadeh, S. S., Romero-García, S., Merget, F., Moscoso-Mártir, A., den Driesch, N. von, Buca, D., and Witzens, J.: Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators, in: SPIE Optics + Optoelectronics, edited by: Cheben, P., Čtyroký, J., and Molina-Fernández, I., Prague, Czech Republic, Monday 13 April 2015, SPIE Proceedings, SPIE, 95160T, 2015b.
Brimont, A., Thomson, D. J., Gardes, F. Y., Fedeli, J. M., Reed, G. T., Marti, J., and Sanchis, P.: High-contrast 40 Gb/s operation of a 500 mum long silicon carrier-depletion slow wave modulator, Opt. Lett., 37, 3504–3506,, 2012.
Short summary
We present the design of an optical modulator for amplitude modulation in a special silicon-on-insulator technology with 250 nm silicon layer thickness. The design of the modulator is optimized by simulating different parameters like dimension of the structure and doping of the silicon to improve the performance of the device. In addition, a prototype is fabricated and successfully measured to demonstrate the functionality of the technology.